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US Patent Issued to Tokyo Electron on July 14 for "Bonding apparatus and bonding method" (Japanese Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,039, issued on July 14, was assigned to Tokyo Electron Ltd. (Tokyo). "Bonding apparatus and bonding method" was invented by Hideyuki Fukush... Read More


US Patent Issued to NGK INSULATORS on July 14 for "Group-III element nitride semiconductor substrate" (Japanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,040, issued on July 14, was assigned to NGK INSULATORS Ltd. (Nagoya, Japan). "Group-III element nitride semiconductor substrate" was invent... Read More


US Patent Issued to ASM IP Holding on July 14 for "Methods of forming superlattice structures using nanoparticles" (Belgian Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,041, issued on July 14, was assigned to ASM IP Holding B.V. (Almere, Netherlands). "Methods of forming superlattice structures using nanopa... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, NATIONAL YANG MING CHIAO TUNG UNIVERSITY on July 14 for "Semiconductor device having source/drain contacts connecting 2-D material layer and method for forming the same" (Taiwanese, American Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,042, issued on July 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL YANG MING CHIAO TUNG ... Read More


US Patent Issued to Applied Materials on July 14 for "Reactive-ion deposition processes for dielectric material formation" (California, Oregon Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,043, issued on July 14, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Reactive-ion deposition processes for dielectric mat... Read More


US Patent Issued to KOKUSAI ELECTRIC on July 14 for "Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus, and recording medium" (Japanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,044, issued on July 14, was assigned to KOKUSAI ELECTRIC Corp. (Tokyo). "Method of manufacturing semiconductor device, method of processing... Read More


US Patent Issued to ASM IP Holding on July 14 for "Deposition of oxide thin films" (Finnish, American Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,045, issued on July 14, was assigned to ASM IP Holding B.V. (Almere, Netherlands). "Deposition of oxide thin films" was invented by Suvi P.... Read More


US Patent Issued to Applied Materials on July 14 for "Doped silicon oxide for bottom-up deposition" (California Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,046, issued on July 14, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Doped silicon oxide for bottom-up deposition" was in... Read More


US Patent Issued to Applied Materials on July 14 for "Atmospheric pressure plasma for substrate annealing" (California Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,047, issued on July 14, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Atmospheric pressure plasma for substrate annealing"... Read More


US Patent Issued to Tokyo Electron on July 14 for "Substrate processing method and substrate processing apparatus" (Japanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,048, issued on July 14, was assigned to Tokyo Electron Ltd. (Tokyo). "Substrate processing method and substrate processing apparatus" was i... Read More